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JAN2N6849
- Part Number:
- JAN2N6849
- Manufacturer:
- Microsemi
- Description:
- MOSFET P-CH 100V 6.5A TO-39
- RoHS Status:
- Contains lead / RoHS non-compliant
- Quantity in Stock:
- 68848 Pieces
- Delivery Time:
- 1-2 days (We have stocks to ship now)
- Production time:
- 4-8 weeks
- Data sheet:
- JAN2N6849.pdf
Introduction
Specifications
| Internal Part Number | RO-JAN2N6849 |
|---|---|
| Condition | Original New |
| Country Origin | Contact us |
| Top Marking | email us |
| Replacement | See datasheet |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | TO-39 |
| Series: | Military, MIL-PRF-19500/564 |
| Rds On (Max) @ Id, Vgs: | 320 mOhm @ 6.5A, 10V |
| Power Dissipation (Max): | 800mW (Ta), 25W (Tc) |
| Packaging: | Bulk |
| Package / Case: | TO-205AF Metal Can |
| Other Names: | JAN2N6849-MIL |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| Gate Charge (Qg) (Max) @ Vgs: | 34.8nC @ 10V |
| FET Type: | P-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 100V |
| Detailed Description: | P-Channel 100V 6.5A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-39 |
| Current - Continuous Drain (Id) @ 25°C: | 6.5A (Tc) |
| Email: | [email protected] |
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