IXFM67N10
Part Number:
IXFM67N10
Manufacturer:
IXYS Corporation
Description:
POWER MOSFET TO-3
RoHS Status:
Lead free / RoHS Compliant
Quantity in Stock:
30028 Pieces
Delivery Time:
1-2 days (We have stocks to ship now)
Production time:
4-8 weeks
Data sheet:
IXFM67N10.pdf

Introduction

ROGER-TECH is the stocking distributor for IXFM67N10, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for IXFM67N10 by email, we will give you a best price according your plan.
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Specifications

Internal Part Number RO-IXFM67N10
Condition Original New
Country Origin Contact us
Top Marking email us
Replacement See datasheet
Vgs(th) (Max) @ Id:4V @ 4mA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-204AE
Series:HiPerFET™
Rds On (Max) @ Id, Vgs:25 mOhm @ 33.5A, 10V
Power Dissipation (Max):300W (Tc)
Package / Case:TO-204AE
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:4500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:260nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):100V
Detailed Description:N-Channel 100V 67A (Tc) 300W (Tc) Through Hole TO-204AE
Current - Continuous Drain (Id) @ 25°C:67A (Tc)
Email:[email protected]

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