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EPC2107ENGRT
- Part Number:
- EPC2107ENGRT
- Manufacturer:
- EPC
- Description:
- TRANS GAN 3N-CH 100V BUMPED DIE
- RoHS Status:
- Lead free / RoHS Compliant
- Quantity in Stock:
- 74851 Pieces
- Delivery Time:
- 1-2 days (We have stocks to ship now)
- Production time:
- 4-8 weeks
- Data sheet:
- EPC2107ENGRT.pdf
Introduction
Specifications
| Internal Part Number | RO-EPC2107ENGRT |
|---|---|
| Condition | Original New |
| Country Origin | Contact us |
| Top Marking | email us |
| Replacement | See datasheet |
| Vgs(th) (Max) @ Id: | 2.5V @ 100µA, 2.5V @ 20µA |
| Supplier Device Package: | 9-BGA (1.35x1.35) |
| Series: | eGaN® |
| Rds On (Max) @ Id, Vgs: | 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V |
| Power - Max: | - |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | 9-VFBGA |
| Other Names: | 917-EPC2107ENGRTR |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 16pF @ 50V, 7pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs: | 0.16nC @ 5V, 0.044nC @ 5V |
| FET Type: | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
| FET Feature: | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss): | 100V |
| Detailed Description: | Mosfet Array 3 N-Channel (Half Bridge + Synchronous Bootstrap) 100V 1.7A, 500mA Surface Mount 9-BGA (1.35x1.35) |
| Current - Continuous Drain (Id) @ 25°C: | 1.7A, 500mA |
| Email: | [email protected] |
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