TK31J60W,S1VQ
TK31J60W,S1VQ
型號:
TK31J60W,S1VQ
製造商:
Toshiba Semiconductor and Storage
描述:
MOSFET N CH 600V 30.8A TO-3P(N)
RoHS狀態:
無鉛/符合RoHS
庫存數量:
57500 Pieces
發貨時間:
1-2 days (We have stocks to ship now)
生產時間:
4-8 weeks
數據表:
TK31J60W,S1VQ.pdf

簡單介紹

We can supply TK31J60W,S1VQ, use the request quote form to request TK31J60W,S1VQ pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TK31J60W,S1VQ.The price and lead time for TK31J60W,S1VQ depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TK31J60W,S1VQ.We look forward to working with you to establish long-term relations of cooperation

產品特性

內部型號 RO-TK31J60W,S1VQ
狀況 Original New
原產地 Contact us
頂部標記 email us
替代 See datasheet
VGS(TH)(最大)@標識:3.7V @ 1.5mA
Vgs(最大):±30V
技術:MOSFET (Metal Oxide)
供應商設備封裝:TO-3P(N)
系列:DTMOSIV
RDS(ON)(最大值)@標識,柵極電壓:88 mOhm @ 15.4A, 10V
功率耗散(最大):230W (Tc)
封装:Tube
封裝/箱體:TO-3P-3, SC-65-3
其他名稱:TK31J60W,S1VQ(O
TK31J60WS1VQ
工作溫度:150°C (TJ)
安裝類型:Through Hole
濕度敏感度等級(MSL):1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:3000pF @ 300V
柵極電荷(Qg)(Max)@ Vgs:86nC @ 10V
FET型:N-Channel
FET特點:Super Junction
驅動電壓(最大Rds開,最小Rds開):10V
漏極至源極電壓(Vdss):600V
詳細說明:N-Channel 600V 30.8A (Ta) 230W (Tc) Through Hole TO-3P(N)
電流 - 25°C連續排水(Id):30.8A (Ta)
Email:[email protected]

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