TK31J60W,S1VQ
- Nomor bagian:
- TK31J60W,S1VQ
- Pabrikan:
- Toshiba Semiconductor and Storage
- Deskripsi:
- MOSFET N CH 600V 30.8A TO-3P(N)
- Status RoHS:
- Memimpin bebas / RoHS Compliant
- Jumlah dalam Stok:
- 57500 Pieces
- Waktu pengiriman:
- 1-2 days (We have stocks to ship now)
- Waktu produksi:
- 4-8 weeks
- Lembaran data:
- TK31J60W,S1VQ.pdf
pengantar
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Spesifikasi
| Nomor Bagian Internal | RO-TK31J60W,S1VQ |
|---|---|
| Kondisi | Original New |
| Negara Asal | Contact us |
| Penandaan Top | email us |
| Penggantian | See datasheet |
| Vgs (th) (Max) @ Id: | 3.7V @ 1.5mA |
| Vgs (Max): | ±30V |
| Teknologi: | MOSFET (Metal Oxide) |
| Paket Perangkat pemasok: | TO-3P(N) |
| Seri: | DTMOSIV |
| Rds Pada (Max) @ Id, Vgs: | 88 mOhm @ 15.4A, 10V |
| Power Disipasi (Max): | 230W (Tc) |
| Pengemasan: | Tube |
| Paket / Case: | TO-3P-3, SC-65-3 |
| Nama lain: | TK31J60W,S1VQ(O TK31J60WS1VQ |
| Suhu Operasional: | 150°C (TJ) |
| mount Jenis: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
| Kapasitansi Masukan (Ciss) (Max) @ VDS: | 3000pF @ 300V |
| Gate Charge (Qg) (Max) @ Vgs: | 86nC @ 10V |
| FET Jenis: | N-Channel |
| Fitur FET: | Super Junction |
| Drive Voltage (Max Rds On, Min RDS Aktif): | 10V |
| Tiriskan untuk Sumber Tegangan (Vdss): | 600V |
| Detil Deskripsi: | N-Channel 600V 30.8A (Ta) 230W (Tc) Through Hole TO-3P(N) |
| Current - Continuous Drain (Id) @ 25 ° C: | 30.8A (Ta) |
| Email: | [email protected] |
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