SI1905BDH-T1-E3
型號:
SI1905BDH-T1-E3
製造商:
Electro-Films (EFI) / Vishay
描述:
MOSFET 2P-CH 8V 0.63A SC70-6
RoHS狀態:
無鉛/符合RoHS
庫存數量:
65021 Pieces
發貨時間:
1-2 days (We have stocks to ship now)
生產時間:
4-8 weeks
數據表:
SI1905BDH-T1-E3.pdf

簡單介紹

We can supply SI1905BDH-T1-E3, use the request quote form to request SI1905BDH-T1-E3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI1905BDH-T1-E3.The price and lead time for SI1905BDH-T1-E3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI1905BDH-T1-E3.We look forward to working with you to establish long-term relations of cooperation

產品特性

內部型號 RO-SI1905BDH-T1-E3
狀況 Original New
原產地 Contact us
頂部標記 email us
替代 See datasheet
VGS(TH)(最大)@標識:1V @ 250µA
供應商設備封裝:SC-70-6 (SOT-363)
系列:TrenchFET®
RDS(ON)(最大值)@標識,柵極電壓:542 mOhm @ 580mA, 4.5V
功率 - 最大:357mW
封装:Tape & Reel (TR)
封裝/箱體:6-TSSOP, SC-88, SOT-363
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:62pF @ 4V
柵極電荷(Qg)(Max)@ Vgs:1.5nC @ 4.5V
FET型:2 P-Channel (Dual)
FET特點:Logic Level Gate
漏極至源極電壓(Vdss):8V
詳細說明:Mosfet Array 2 P-Channel (Dual) 8V 630mA 357mW Surface Mount SC-70-6 (SOT-363)
電流 - 25°C連續排水(Id):630mA
基礎部件號:SI1905
Email:[email protected]

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