RN2130MFV,L3F
型號:
RN2130MFV,L3F
製造商:
Toshiba Semiconductor and Storage
描述:
X34 PB-F VESM TRANSISTOR PD 150M
RoHS狀態:
無鉛/符合RoHS
庫存數量:
52597 Pieces
發貨時間:
1-2 days (We have stocks to ship now)
生產時間:
4-8 weeks
數據表:
RN2130MFV,L3F.pdf

簡單介紹

We can supply RN2130MFV,L3F, use the request quote form to request RN2130MFV,L3F pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RN2130MFV,L3F.The price and lead time for RN2130MFV,L3F depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RN2130MFV,L3F.We look forward to working with you to establish long-term relations of cooperation

產品特性

內部型號 RO-RN2130MFV,L3F
狀況 Original New
原產地 Contact us
頂部標記 email us
替代 See datasheet
電壓 - 集電極發射極擊穿(最大):50V
Vce飽和(最大)@ IB,IC:300mV @ 500µA, 5mA
晶體管類型:PNP - Pre-Biased
供應商設備封裝:VESM
系列:-
電阻器 - 發射器底座(R2):100 kOhms
電阻器 - 基座(R1):100 kOhms
功率 - 最大:150mW
封裝/箱體:SOT-723
其他名稱:RN2130MFVL3F
安裝類型:Surface Mount
製造商標準交貨期:16 Weeks
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
詳細說明:Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 150mW Surface Mount VESM
直流電流增益(HFE)(最小值)@ IC,的Vce:100 @ 10mA, 5V
電流 - 集電極截止(最大):100nA (ICBO)
電流 - 集電極(Ic)(最大):100mA
Email:[email protected]

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