TK7E80W,S1X
Artikelnummer:
TK7E80W,S1X
Tillverkare:
Toshiba Semiconductor and Storage
Beskrivning:
MOSFET N-CH 800V 6.5A TO220
RoHS-status:
Blyfri / Överensstämmer med RoHS
Antal i lager:
40593 Pieces
Leveranstid:
1-2 days (We have stocks to ship now)
Produktionstid:
4-8 weeks
Datablad:
TK7E80W,S1X.pdf

Introduktion

We can supply TK7E80W,S1X, use the request quote form to request TK7E80W,S1X pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TK7E80W,S1X.The price and lead time for TK7E80W,S1X depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TK7E80W,S1X.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Internt delnummer RO-TK7E80W,S1X
Tillstånd Original New
Ursprungsland Contact us
Toppmarkering email us
Ersättning See datasheet
Vgs (th) (Max) @ Id:4V @ 280µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:TO-220
Serier:DTMOSIV
Rds On (Max) @ Id, Vgs:950 mOhm @ 3.3A, 10V
Effektdissipation (Max):110W (Tc)
Förpackning:Tube
Förpackning / Fodral:TO-220-3
Andra namn:TK7E80W,S1X(S
TK7E80WS1X
Driftstemperatur:150°C
Monteringstyp:Through Hole
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:700pF @ 300V
Gate Laddning (Qg) (Max) @ Vgs:13nC @ 10V
FET-typ:N-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):10V
Avlopp till källspänning (Vdss):800V
detaljerad beskrivning:N-Channel 800V 6.5A (Ta) 110W (Tc) Through Hole TO-220
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:6.5A (Ta)
Email:[email protected]

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