GP2M012A080NG
GP2M012A080NG
Artikelnummer:
GP2M012A080NG
Tillverkare:
Global Power Technologies Group
Beskrivning:
MOSFET N-CH 800V 12A TO3PN
RoHS-status:
Blyfri / Överensstämmer med RoHS
Antal i lager:
30523 Pieces
Leveranstid:
1-2 days (We have stocks to ship now)
Produktionstid:
4-8 weeks
Datablad:
GP2M012A080NG.pdf

Introduktion

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Specifikationer

Internt delnummer RO-GP2M012A080NG
Tillstånd Original New
Ursprungsland Contact us
Toppmarkering email us
Ersättning See datasheet
Vgs (th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:TO-3PN
Serier:-
Rds On (Max) @ Id, Vgs:650 mOhm @ 6A, 10V
Effektdissipation (Max):416W (Tc)
Förpackning:Tube
Förpackning / Fodral:TO-3P-3, SC-65-3
Andra namn:1560-1211-1
1560-1211-1-ND
1560-1211-5
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstyp:Through Hole
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:3370pF @ 25V
Gate Laddning (Qg) (Max) @ Vgs:79nC @ 10V
FET-typ:N-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):10V
Avlopp till källspänning (Vdss):800V
detaljerad beskrivning:N-Channel 800V 12A (Tc) 416W (Tc) Through Hole TO-3PN
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:12A (Tc)
Email:[email protected]

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