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GP2M012A080NG
- Part Number:
- GP2M012A080NG
- Manufacturer:
- Global Power Technologies Group
- Description:
- MOSFET N-CH 800V 12A TO3PN
- RoHS Status:
- Lead free / RoHS Compliant
- Quantity in Stock:
- 30523 Pieces
- Delivery Time:
- 1-2 days (We have stocks to ship now)
- Production time:
- 4-8 weeks
- Data sheet:
- GP2M012A080NG.pdf
Introduction
Specifications
| Internal Part Number | RO-GP2M012A080NG |
|---|---|
| Condition | Original New |
| Country Origin | Contact us |
| Top Marking | email us |
| Replacement | See datasheet |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Vgs (Max): | ±30V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | TO-3PN |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 650 mOhm @ 6A, 10V |
| Power Dissipation (Max): | 416W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-3P-3, SC-65-3 |
| Other Names: | 1560-1211-1 1560-1211-1-ND 1560-1211-5 |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 3370pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 79nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 800V |
| Detailed Description: | N-Channel 800V 12A (Tc) 416W (Tc) Through Hole TO-3PN |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
| Email: | [email protected] |
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