BAS316,H3F
Artikelnummer:
BAS316,H3F
Tillverkare:
Toshiba Semiconductor and Storage
Beskrivning:
DIODE GEN PURP 100V 250MA USC
RoHS-status:
Blyfri / Överensstämmer med RoHS
Antal i lager:
75348 Pieces
Leveranstid:
1-2 days (We have stocks to ship now)
Produktionstid:
4-8 weeks
Datablad:
BAS316,H3F.pdf

Introduktion

We can supply BAS316,H3F, use the request quote form to request BAS316,H3F pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number BAS316,H3F.The price and lead time for BAS316,H3F depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# BAS316,H3F.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Internt delnummer RO-BAS316,H3F
Tillstånd Original New
Ursprungsland Contact us
Toppmarkering email us
Ersättning See datasheet
Spänning - Framåt (Vf) (Max) @ Om:1.25V @ 150mA
Spänning - DC-omvänd (Vr) (Max):100V
Leverantörs Device Package:USC
Fart:Fast Recovery = 200mA (Io)
Serier:-
Omvänd återställningstid (trr):3ns
Förpackning / Fodral:SC-76, SOD-323
Andra namn:BAS316H3F
Driftstemperatur - korsning:150°C (Max)
Monteringstyp:Surface Mount
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Diodtyp:Standard
detaljerad beskrivning:Diode Standard 100V 250mA Surface Mount USC
Ström - Omvänd läckage @ Vr:200nA @ 80V
Aktuell - Genomsnittlig Rectified (Io):250mA
Kapacitans @ Vr, F:0.35pF @ 0V, 1MHz
Email:[email protected]

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