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Casa > Produtos > Produtos semicondutores discretos > Transistores - FETs, MOSFETs - Single > TK15A60U(STA4,Q,M)
TK15A60U(STA4,Q,M)
TK15A60U(STA4,Q,M)
Modelo do Produto:
TK15A60U(STA4,Q,M)
Fabricante:
Toshiba Semiconductor and Storage
Descrição:
MOSFET N-CH 600V 15A TO-220SIS
Status de RoHS:
Sem chumbo / acordo com RoHS
Quantidade em estoque:
46771 Pieces
Tempo de entrega:
1-2 days (We have stocks to ship now)
Tempo de produção:
4-8 weeks
Ficha de dados:
1.TK15A60U(STA4,Q,M).pdf2.TK15A60U(STA4,Q,M).pdf
inquérito

Introdução

We can supply TK15A60U(STA4,Q,M), use the request quote form to request TK15A60U(STA4,Q,M) pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TK15A60U(STA4,Q,M).The price and lead time for TK15A60U(STA4,Q,M) depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TK15A60U(STA4,Q,M).We look forward to working with you to establish long-term relations of cooperation

Especificações

Número de peça interno RO-TK15A60U(STA4,Q,M)
Condição Original New
País de origem Contact us
Marcação superior email us
Substituição See datasheet
VGS (th) (Max) @ Id:5V @ 1mA
Vgs (Max):±30V
Tecnologia:MOSFET (Metal Oxide)
Embalagem do dispositivo fornecedor:TO-220SIS
Série:DTMOSII
RDS ON (Max) @ Id, VGS:300 mOhm @ 7.5A, 10V
Dissipação de energia (Max):40W (Tc)
Embalagem:Tube
Caixa / Gabinete:TO-220-3 Full Pack
Outros nomes:TK15A60U(Q)
TK15A60U(Q,M)
TK15A60U(QM)
TK15A60U(QM)-ND
TK15A60U(STA4QM)
TK15A60UQ
TK15A60UQ-ND
TK15A60USTA4QM
Temperatura de operação:150°C (TJ)
Tipo de montagem:Through Hole
Nível de sensibilidade à umidade (MSL):1 (Unlimited)
Status sem chumbo / status de RoHS:Lead free / RoHS Compliant
Capacitância de Entrada (Ciss) (Max) @ Vds:950pF @ 10V
Carga de Porta (Qg) (Max) @ Vgs:17nC @ 10V
Tipo FET:N-Channel
Característica FET:-
Voltagem da unidade (Rds máximo ligado, Rds mínimo ligado):10V
Escorra a tensão de fonte (Vdss):600V
Descrição detalhada:N-Channel 600V 15A (Ta) 40W (Tc) Through Hole TO-220SIS
Corrente - Drenagem Contínua (Id) @ 25 ° C:15A (Ta)
Email:[email protected]

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