Português
English Deutsch Français русский español Português Italia 한국의 العربية Türk dili polski Suomi Indonesia Tiếng Việt ภาษาไทย Nederland Pilipino Čeština 繁体中文 Magyarország Svenska Ελλάδα Български език✕
Sobre Nós | Contacte-nos | Solicitar um orçamento |
Casa > Produtos > Produtos semicondutores discretos > Transistores - Bipolar (BJT) - Single, pre-tendenc > RN1132MFV,L3F
RN1132MFV,L3F
Modelo do Produto:
RN1132MFV,L3F
Fabricante:
Toshiba Semiconductor and Storage
Descrição:
X34 PB-F VESM TRANSISTOR PD 150M
Status de RoHS:
Sem chumbo / acordo com RoHS
Quantidade em estoque:
56638 Pieces
Tempo de entrega:
1-2 days (We have stocks to ship now)
Tempo de produção:
4-8 weeks
Ficha de dados:
RN1132MFV,L3F.pdf
inquérito

Introdução

We can supply RN1132MFV,L3F, use the request quote form to request RN1132MFV,L3F pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RN1132MFV,L3F.The price and lead time for RN1132MFV,L3F depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RN1132MFV,L3F.We look forward to working with you to establish long-term relations of cooperation

Especificações

Número de peça interno RO-RN1132MFV,L3F
Condição Original New
País de origem Contact us
Marcação superior email us
Substituição See datasheet
Tensão - emissor de coletor de Breakdown (Max):50V
Vce Saturação (Max) @ Ib, Ic:300mV @ 500µA, 5mA
Tipo transistor:NPN - Pre-Biased
Embalagem do dispositivo fornecedor:VESM
Série:-
Resistor - Base (R1):200 kOhms
Power - Max:150mW
Caixa / Gabinete:SOT-723
Outros nomes:RN1132MFVL3F
Tipo de montagem:Surface Mount
Status sem chumbo / status de RoHS:Lead free / RoHS Compliant
Descrição detalhada:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM
DC ganho de corrente (HFE) (min) @ Ic, Vce:120 @ 1mA, 5V
Atual - Collector Cutoff (Max):100nA (ICBO)
Atual - Collector (Ic) (Max):100mA
Email:[email protected]

Pedido de Orçamento Rápido

Modelo do Produto
Quantidade
Empresa
O email
Telefone
Observações

Peças relacionadas para RN1132MFV,L3F

Imagem Modelo do Produto Fabricantes Descrição Visão
RN112-3.6-02-0M4 Image RN112-3.6-02-0M4 Schaffner EMC, Inc. CMC 400UH 3.6A 2LN TH inquérito
RN112-1.5-02-3M3 Image RN112-1.5-02-3M3 Schaffner EMC, Inc. CMC 3.3MH 1.5A 2LN TH inquérito
RN1130MFV,L3F Image RN1130MFV,L3F Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.15W VESM inquérito
RN112-2-02 Image RN112-2-02 Schaffner EMC, Inc. CMC 1.8MH 2A 2LN TH inquérito
RN114-0.8-02-27M Image RN114-0.8-02-27M Schaffner EMC, Inc. CMC 27MH 800MA 2LN TH inquérito
RN114-0.5-02 Image RN114-0.5-02 Schaffner EMC, Inc. CMC 39MH 500MA 2LN TH inquérito
RN114-0.8-02 Image RN114-0.8-02 Schaffner EMC, Inc. CMC 27MH 800MA 2LN TH inquérito
RN112-2-02-1M0 Image RN112-2-02-1M0 Schaffner EMC, Inc. CMC 1MH 2A 2LN TH inquérito
RN114-1.2-02-10M Image RN114-1.2-02-10M Schaffner EMC, Inc. CMC 10MH 1.2A 2LN TH inquérito
RN112-4-02 Image RN112-4-02 Schaffner EMC, Inc. CMC 700UH 4A 2LN TH inquérito
RN1131MFV(TL3,T) Image RN1131MFV(TL3,T) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.15W VESM inquérito
RN114-0.3-02 Image RN114-0.3-02 Schaffner EMC, Inc. CMC 47MH 300MA 2LN TH inquérito
RN114-1-02-15M Image RN114-1-02-15M Schaffner EMC, Inc. CMC 15MH 1A 2LN TH inquérito
RN114-1.2-02 Image RN114-1.2-02 Schaffner EMC, Inc. CMC 10MH 1.2A 2LN TH inquérito
RN114-0.3-02-47M Image RN114-0.3-02-47M Schaffner EMC, Inc. CMC 47MH 300MA 2LN TH inquérito
RN112-2-02-1M8 Image RN112-2-02-1M8 Schaffner EMC, Inc. CMC 1.8MH 2A 2LN TH inquérito
RN112-2.6-02-0M4 Image RN112-2.6-02-0M4 Schaffner EMC, Inc. CMC 400UH 2.6A 2LN TH inquérito
RN114-1-02 Image RN114-1-02 Schaffner EMC, Inc. COMMON MODE CHOKE 15MH 1A 2LN TH inquérito
RN112-4-02-0M7 Image RN112-4-02-0M7 Schaffner EMC, Inc. CMC 700UH 4A 2LN TH inquérito
RN114-0.5-02-39M Image RN114-0.5-02-39M Schaffner EMC, Inc. CMC 39MH 500MA 2LN TH inquérito

Latest Notícias