Intern onderdeelnummer | RO-SIA421DJ-T1-GE3 |
---|---|
Staat | Original New |
Land van oorsprong | Contact us |
Top Markering | email us |
Vervanging | See datasheet |
Voltage - Test: | 950pF @ 15V |
Voltage - Breakdown: | PowerPAK® SC-70-6 Single |
VGS (th) (Max) @ Id: | 35 mOhm @ 5.3A, 10V |
Vgs (Max): | 4.5V, 10V |
Technologie: | MOSFET (Metal Oxide) |
Serie: | TrenchFET® |
RoHS Status: | Tape & Reel (TR) |
Rds On (Max) @ Id, VGS: | 12A (Tc) |
Polarisatie: | PowerPAK® SC-70-6 |
Andere namen: | SIA421DJ-T1-GE3TR SIA421DJT1GE3 |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Fabrikant Standaard Levertijd: | 24 Weeks |
Fabrikant Onderdeelnummer: | SIA421DJ-T1-GE3 |
Input Capacitance (Ciss) (Max) @ Vds: | 29nC @ 10V |
IGBT Type: | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 3V @ 250µA |
FET Feature: | P-Channel |
Uitgebreide beschrijving: | P-Channel 30V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single |
Drain naar de Bron Voltage (Vdss): | - |
Beschrijving: | MOSFET P-CH 30V 12A SC70-6 |
Current - Continuous Drain (Id) @ 25 ° C: | 30V |
capacitieve Ratio: | 3.5W (Ta), 19W (Tc) |
Email: | [email protected] |