Nomor Bagian Internal | RO-SIA421DJ-T1-GE3 |
---|---|
Kondisi | Original New |
Negara Asal | Contact us |
Penandaan Top | email us |
Penggantian | See datasheet |
Tegangan - Uji: | 950pF @ 15V |
Tegangan - Breakdown: | PowerPAK® SC-70-6 Single |
Vgs (th) (Max) @ Id: | 35 mOhm @ 5.3A, 10V |
Vgs (Max): | 4.5V, 10V |
Teknologi: | MOSFET (Metal Oxide) |
Seri: | TrenchFET® |
Status RoHS: | Tape & Reel (TR) |
Rds Pada (Max) @ Id, Vgs: | 12A (Tc) |
Polarisasi: | PowerPAK® SC-70-6 |
Nama lain: | SIA421DJ-T1-GE3TR SIA421DJT1GE3 |
Suhu Operasional: | -55°C ~ 150°C (TJ) |
mount Jenis: | Surface Mount |
Tingkat Sensitivitas Kelembaban (MSL): | 1 (Unlimited) |
Manufacturer Standard Lead Time: | 24 Weeks |
Nomor Bagian Produsen: | SIA421DJ-T1-GE3 |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 29nC @ 10V |
IGBT Jenis: | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 3V @ 250µA |
Fitur FET: | P-Channel |
Deskripsi yang Diperluas: | P-Channel 30V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single |
Tiriskan untuk Sumber Tegangan (Vdss): | - |
Deskripsi: | MOSFET P-CH 30V 12A SC70-6 |
Current - Continuous Drain (Id) @ 25 ° C: | 30V |
kapasitansi Ratio: | 3.5W (Ta), 19W (Tc) |
Email: | [email protected] |