Intern onderdeelnummer | RO-PBSS8110AS,126 |
---|---|
Staat | Original New |
Land van oorsprong | Contact us |
Top Markering | email us |
Vervanging | See datasheet |
Spanning - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 100mA, 1A |
transistor Type: | NPN |
Leverancier Device Pakket: | TO-92-3 |
Serie: | - |
Vermogen - Max: | 830mW |
Packaging: | Tape & Box (TB) |
Verpakking / doos: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Andere namen: | 934057764126 PBSS8110AS AMO PBSS8110AS AMO-ND |
Temperatuur: | 150°C (TJ) |
montage Type: | Through Hole |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Frequentie - Transition: | 100MHz |
gedetailleerde beschrijving: | Bipolar (BJT) Transistor NPN 100V 1A 100MHz 830mW Through Hole TO-92-3 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 150 @ 250mA, 10V |
Current - Collector Cutoff (Max): | 100nA |
Current - Collector (Ic) (Max): | 1A |
Email: | [email protected] |