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Casa > Centro di prodotti > Prodotti a semiconduttore discreti > Transistor-FET, MOSFET-matrici > APTC60AM70T1G
APTC60AM70T1G
Modello di prodotti:
APTC60AM70T1G
fabbricante:
Microsemi
Descrizione:
MOSFET 2N-CH 600V 39A SP1
Stato RoHS:
Senza piombo / RoHS conforme
Quantità in magazzino:
62249 Pieces
Tempo di consegna:
1-2 days (We have stocks to ship now)
Tempi di produzione:
4-8 weeks
Scheda dati:
1.APTC60AM70T1G.pdf2.APTC60AM70T1G.pdf
Inchiesta

introduzione

We can supply APTC60AM70T1G, use the request quote form to request APTC60AM70T1G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APTC60AM70T1G.The price and lead time for APTC60AM70T1G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APTC60AM70T1G.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Numero di parte interno RO-APTC60AM70T1G
Condizione Original New
Paese di origine Contact us
Contrassegno superiore email us
Sostituzione See datasheet
Vgs (th) (max) a Id:3.9V @ 2.7mA
Contenitore dispositivo fornitore:SP1
Serie:-
Rds On (max) a Id, Vgs:70 mOhm @ 39A, 10V
Potenza - Max:250W
imballaggio:Bulk
Contenitore / involucro:SP1
temperatura di esercizio:-40°C ~ 150°C (TJ)
Tipo montaggio:Chassis Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Capacità di ingresso (Ciss) (Max) @ Vds:7000pF @ 25V
Carica Gate (Qg) (Max) @ Vgs:259nC @ 10V
Tipo FET:2 N-Channel (Half Bridge)
Caratteristica FET:Standard
Tensione drain-source (Vdss):600V
Descrizione dettagliata:Mosfet Array 2 N-Channel (Half Bridge) 600V 39A 250W Chassis Mount SP1
Corrente - Drain continuo (Id) @ 25 ° C:39A
Email:[email protected]

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