SI4860DY-T1-E3
Nomor bagian:
SI4860DY-T1-E3
Pabrikan:
Electro-Films (EFI) / Vishay
Deskripsi:
MOSFET N-CH 30V 11A 8-SOIC
Status RoHS:
Memimpin bebas / RoHS Compliant
Jumlah dalam Stok:
81221 Pieces
Waktu pengiriman:
1-2 days (We have stocks to ship now)
Waktu produksi:
4-8 weeks
Lembaran data:
SI4860DY-T1-E3.pdf

pengantar

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Spesifikasi

Nomor Bagian Internal RO-SI4860DY-T1-E3
Kondisi Original New
Negara Asal Contact us
Penandaan Top email us
Penggantian See datasheet
Vgs (th) (Max) @ Id:1V @ 250µA (Min)
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:8-SO
Seri:TrenchFET®
Rds Pada (Max) @ Id, Vgs:8 mOhm @ 16A, 10V
Power Disipasi (Max):1.6W (Ta)
Pengemasan:Original-Reel®
Paket / Case:8-SOIC (0.154", 3.90mm Width)
Nama lain:SI4860DY-T1-E3DKR
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs:18nC @ 4.5V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):4.5V, 10V
Tiriskan untuk Sumber Tegangan (Vdss):30V
Detil Deskripsi:N-Channel 30V 11A (Ta) 1.6W (Ta) Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25 ° C:11A (Ta)
Email:[email protected]

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