SI4862DY-T1-GE3
Nomor bagian:
SI4862DY-T1-GE3
Pabrikan:
Electro-Films (EFI) / Vishay
Deskripsi:
MOSFET N-CH 16V 17A 8-SOIC
Status RoHS:
Memimpin bebas / RoHS Compliant
Jumlah dalam Stok:
65732 Pieces
Waktu pengiriman:
1-2 days (We have stocks to ship now)
Waktu produksi:
4-8 weeks
Lembaran data:
SI4862DY-T1-GE3.pdf

pengantar

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Spesifikasi

Nomor Bagian Internal RO-SI4862DY-T1-GE3
Kondisi Original New
Negara Asal Contact us
Penandaan Top email us
Penggantian See datasheet
Vgs (th) (Max) @ Id:600mV @ 250µA (Min)
Vgs (Max):±8V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:8-SO
Seri:TrenchFET®
Rds Pada (Max) @ Id, Vgs:3.3 mOhm @ 25A, 4.5V
Power Disipasi (Max):1.6W (Ta)
Pengemasan:Tape & Reel (TR)
Paket / Case:8-SOIC (0.154", 3.90mm Width)
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:6 Weeks
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs:70nC @ 4.5V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):2.5V, 4.5V
Tiriskan untuk Sumber Tegangan (Vdss):16V
Detil Deskripsi:N-Channel 16V 17A (Ta) 1.6W (Ta) Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25 ° C:17A (Ta)
Email:[email protected]

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