Nomor Bagian Internal | RO-GA10JT12-263 |
---|---|
Kondisi | Original New |
Negara Asal | Contact us |
Penandaan Top | email us |
Penggantian | See datasheet |
Vgs (th) (Max) @ Id: | - |
Vgs (Max): | - |
Teknologi: | SiC (Silicon Carbide Junction Transistor) |
Paket Perangkat pemasok: | - |
Seri: | - |
Rds Pada (Max) @ Id, Vgs: | 120 mOhm @ 10A |
Power Disipasi (Max): | 170W (Tc) |
Pengemasan: | Tube |
Paket / Case: | - |
Nama lain: | 1242-1186 GA10JT12-220ISO GA10JT12220ISO |
Suhu Operasional: | 175°C (TJ) |
mount Jenis: | Surface Mount |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Manufacturer Standard Lead Time: | 18 Weeks |
Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 1403pF @ 800V |
FET Jenis: | - |
Fitur FET: | - |
Drive Voltage (Max Rds On, Min RDS Aktif): | - |
Tiriskan untuk Sumber Tegangan (Vdss): | 1200V |
Detil Deskripsi: | 1200V 25A (Tc) 170W (Tc) Surface Mount |
Current - Continuous Drain (Id) @ 25 ° C: | 25A (Tc) |
Email: | [email protected] |