GA10JT12-263
GA10JT12-263
Nomor bagian:
GA10JT12-263
Pabrikan:
GeneSiC Semiconductor
Deskripsi:
TRANS SJT 1200V 25A
Status RoHS:
Memimpin bebas / RoHS Compliant
Jumlah dalam Stok:
77463 Pieces
Waktu pengiriman:
1-2 days (We have stocks to ship now)
Waktu produksi:
4-8 weeks
Lembaran data:
GA10JT12-263.pdf

pengantar

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Spesifikasi

Nomor Bagian Internal RO-GA10JT12-263
Kondisi Original New
Negara Asal Contact us
Penandaan Top email us
Penggantian See datasheet
Vgs (th) (Max) @ Id:-
Vgs (Max):-
Teknologi:SiC (Silicon Carbide Junction Transistor)
Paket Perangkat pemasok:-
Seri:-
Rds Pada (Max) @ Id, Vgs:120 mOhm @ 10A
Power Disipasi (Max):170W (Tc)
Pengemasan:Tube
Paket / Case:-
Nama lain:1242-1186
GA10JT12-220ISO
GA10JT12220ISO
Suhu Operasional:175°C (TJ)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:18 Weeks
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:1403pF @ 800V
FET Jenis:-
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):-
Tiriskan untuk Sumber Tegangan (Vdss):1200V
Detil Deskripsi:1200V 25A (Tc) 170W (Tc) Surface Mount
Current - Continuous Drain (Id) @ 25 ° C:25A (Tc)
Email:[email protected]

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