Nomor Bagian Internal | RO-EPC8003ENGR |
---|---|
Kondisi | Original New |
Negara Asal | Contact us |
Penandaan Top | email us |
Penggantian | See datasheet |
Tegangan - Uji: | 38pF @ 50V |
Tegangan - Breakdown: | Die |
Vgs (th) (Max) @ Id: | 300 mOhm @ 500mA, 5V |
Teknologi: | GaNFET (Gallium Nitride) |
Seri: | eGaN® |
Status RoHS: | Tray |
Rds Pada (Max) @ Id, Vgs: | 2.5A (Ta) |
Polarisasi: | Die |
Nama lain: | 917-EPC8003ENGR EPC8003ENGK |
Suhu Operasional: | -40°C ~ 125°C (TJ) |
mount Jenis: | Surface Mount |
Tingkat Sensitivitas Kelembaban (MSL): | 1 (Unlimited) |
Nomor Bagian Produsen: | EPC8003ENGR |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 0.32nC @ 5V |
Gate Charge (Qg) (Max) @ Vgs: | 2.5V @ 250µA |
Fitur FET: | N-Channel |
Deskripsi yang Diperluas: | N-Channel 100V 2.5A (Ta) Surface Mount Die |
Tiriskan untuk Sumber Tegangan (Vdss): | - |
Deskripsi: | TRANS GAN 100V 2.5A BUMPED DIE |
Current - Continuous Drain (Id) @ 25 ° C: | 100V |
kapasitansi Ratio: | - |
Email: | [email protected] |