Nomor Bagian Internal | RO-EPC8002 |
---|---|
Kondisi | Original New |
Negara Asal | Contact us |
Penandaan Top | email us |
Penggantian | See datasheet |
Vgs (th) (Max) @ Id: | 2.5V @ 250µA |
Vgs (Max): | +6V, -4V |
Teknologi: | GaNFET (Gallium Nitride) |
Paket Perangkat pemasok: | Die |
Seri: | eGaN® |
Rds Pada (Max) @ Id, Vgs: | 530 mOhm @ 500mA, 5V |
Power Disipasi (Max): | - |
Pengemasan: | Cut Tape (CT) |
Paket / Case: | Die |
Nama lain: | 917-1118-1 |
Suhu Operasional: | -40°C ~ 150°C (TJ) |
mount Jenis: | Surface Mount |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Manufacturer Standard Lead Time: | 12 Weeks |
Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 21pF @ 32.5V |
FET Jenis: | N-Channel |
Fitur FET: | - |
Drive Voltage (Max Rds On, Min RDS Aktif): | 5V |
Tiriskan untuk Sumber Tegangan (Vdss): | 65V |
Detil Deskripsi: | N-Channel 65V 2A (Ta) Surface Mount Die |
Current - Continuous Drain (Id) @ 25 ° C: | 2A (Ta) |
Email: | [email protected] |