AS6C2016-55BIN
AS6C2016-55BIN
Nomor bagian:
AS6C2016-55BIN
Pabrikan:
Alliance Memory, Inc.
Deskripsi:
IC SRAM 2M PARALLEL 48TFBGA
Status RoHS:
Memimpin bebas / RoHS Compliant
Jumlah dalam Stok:
86035 Pieces
Waktu pengiriman:
1-2 days (We have stocks to ship now)
Waktu produksi:
4-8 weeks
Lembaran data:
AS6C2016-55BIN.pdf

pengantar

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Spesifikasi

Nomor Bagian Internal RO-AS6C2016-55BIN
Kondisi Original New
Negara Asal Contact us
Penandaan Top email us
Penggantian See datasheet
Tulis Siklus Waktu - Kata, Halaman:55ns
Tegangan - Pasokan:2.7 V ~ 5.5 V
Teknologi:SRAM - Asynchronous
Paket Perangkat pemasok:48-TFBGA (6x8)
Seri:-
Pengemasan:Tray
Paket / Case:48-TFBGA
Nama lain:1450-1175
AS6C2016-55BIN-ND
Suhu Operasional:-40°C ~ 85°C (TA)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):3 (168 Hours)
memory Type:Volatile
Ukuran memori:2Mb (128K x 16)
Antarmuka Memori:Parallel
Format Memori:SRAM
Manufacturer Standard Lead Time:8 Weeks
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Detil Deskripsi:SRAM - Asynchronous Memory IC 2Mb (128K x 16) Parallel 55ns 48-TFBGA (6x8)
Waktu akses:55ns
Email:[email protected]

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