BSP297L6327HTSA1
- Modèle de produit:
- BSP297L6327HTSA1
- La description:
- MOSFET N-CH 200V 660MA SOT-223
- Statut RoHS:
- Sans plomb / conforme à la directive RoHS
- la quantité en dépôt:
- 48028 Pieces
- Heure de livraison:
- 1-2 days (We have stocks to ship now)
- Temps de production:
- 4-8 weeks
- Fiche technique:
- BSP297L6327HTSA1.pdf
introduction
We can supply BSP297L6327HTSA1, use the request quote form to request BSP297L6327HTSA1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number BSP297L6327HTSA1.The price and lead time for BSP297L6327HTSA1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# BSP297L6327HTSA1.We look forward to working with you to establish long-term relations of cooperation
Spécifications
| Numéro de pièce interne | RO-BSP297L6327HTSA1 |
|---|---|
| État | Original New |
| Pays d'origine | Contact us |
| Top Marking | email us |
| Remplacement | See datasheet |
| Vgs (th) (Max) @ Id: | 1.8V @ 400µA |
| Vgs (Max): | ±20V |
| La technologie: | MOSFET (Metal Oxide) |
| Package composant fournisseur: | PG-SOT223-4 |
| Séries: | SIPMOS® |
| Rds On (Max) @ Id, Vgs: | 1.8 Ohm @ 660mA, 10V |
| Dissipation de puissance (max): | 1.8W (Ta) |
| Emballage: | Tape & Reel (TR) |
| Package / Boîte: | TO-261-4, TO-261AA |
| Autres noms: | BSP297 L6327 BSP297 L6327-ND BSP297L6327HTSA1TR BSP297L6327INTR BSP297L6327INTR-ND BSP297L6327XT SP000089213 |
| Température de fonctionnement: | -55°C ~ 150°C (TJ) |
| Type de montage: | Surface Mount |
| Niveau de sensibilité à l'humidité (MSL): | 1 (Unlimited) |
| Statut sans plomb / Statut RoHS: | Lead free / RoHS Compliant |
| Capacité d'entrée (Ciss) (Max) @ Vds: | 357pF @ 25V |
| Charge de la porte (Qg) (Max) @ Vgs: | 16.1nC @ 10V |
| type de FET: | N-Channel |
| Fonction FET: | - |
| Tension d'entraînement (Max Rds activé, Min Rds activé): | 4.5V, 10V |
| Tension drain-source (Vdss): | 200V |
| Description détaillée: | N-Channel 200V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4 |
| Courant - Drainage continu (Id) à 25 ° C: | 660mA (Ta) |
| Email: | [email protected] |
