BSP297L6327HTSA1
- Número de pieza:
- BSP297L6327HTSA1
- Descripción:
- MOSFET N-CH 200V 660MA SOT-223
- Estado RoHS:
- Sin plomo / Cumple con RoHS
- Cantidad en inventario:
- 48028 Pieces
- El tiempo de entrega:
- 1-2 days (We have stocks to ship now)
- Tiempo de producción:
- 4-8 weeks
- Ficha de datos:
- BSP297L6327HTSA1.pdf
Introducción
We can supply BSP297L6327HTSA1, use the request quote form to request BSP297L6327HTSA1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number BSP297L6327HTSA1.The price and lead time for BSP297L6327HTSA1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# BSP297L6327HTSA1.We look forward to working with you to establish long-term relations of cooperation
Especificaciones
| Número de parte interno | RO-BSP297L6327HTSA1 |
|---|---|
| Condición | Original New |
| País de origen | Contact us |
| Marcado superior | email us |
| Reemplazo | See datasheet |
| VGS (th) (Max) @Id: | 1.8V @ 400µA |
| Vgs (Max): | ±20V |
| Tecnología: | MOSFET (Metal Oxide) |
| Paquete del dispositivo: | PG-SOT223-4 |
| Serie: | SIPMOS® |
| RDS (Max) @Id, Vgs: | 1.8 Ohm @ 660mA, 10V |
| La disipación de energía (máximo): | 1.8W (Ta) |
| embalaje: | Tape & Reel (TR) |
| Paquete / Cubierta: | TO-261-4, TO-261AA |
| Otros nombres: | BSP297 L6327 BSP297 L6327-ND BSP297L6327HTSA1TR BSP297L6327INTR BSP297L6327INTR-ND BSP297L6327XT SP000089213 |
| Temperatura de funcionamiento: | -55°C ~ 150°C (TJ) |
| Tipo de montaje: | Surface Mount |
| Nivel de sensibilidad a la humedad (MSL): | 1 (Unlimited) |
| Estado sin plomo / Estado RoHS: | Lead free / RoHS Compliant |
| Capacitancia de Entrada (Ciss) (Max) @ Vds: | 357pF @ 25V |
| Carga de puerta (Qg) (máx.) @ Vgs: | 16.1nC @ 10V |
| Tipo FET: | N-Channel |
| Característica de FET: | - |
| Voltaje de la Unidad (Max Rds On, Min Rds On): | 4.5V, 10V |
| Voltaje drenaje-fuente (VDS) Las: | 200V |
| Descripción detallada: | N-Channel 200V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4 |
| Corriente - Drenaje Continuo (Id) @ 25 ° C: | 660mA (Ta) |
| Email: | [email protected] |
