BSP299H6327XUSA1
BSP299H6327XUSA1
Modèle de produit:
BSP299H6327XUSA1
Fabricant:
International Rectifier (Infineon Technologies)
La description:
MOSFET N-CH 500V 0.4A SOT-223
Statut RoHS:
Sans plomb / conforme à la directive RoHS
la quantité en dépôt:
89628 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
BSP299H6327XUSA1.pdf

introduction

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Spécifications

Numéro de pièce interne RO-BSP299H6327XUSA1
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Vgs (th) (Max) @ Id:4V @ 1mA
Vgs (Max):±20V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:PG-SOT223-4
Séries:SIPMOS®
Rds On (Max) @ Id, Vgs:4 Ohm @ 400mA, 10V
Dissipation de puissance (max):1.8W (Ta)
Emballage:Tape & Reel (TR)
Package / Boîte:TO-261-4, TO-261AA
Autres noms:BSP299H6327XUSA1-ND
BSP299H6327XUSA1TR
SP001058628
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):3 (168 Hours)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:400pF @ 25V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):500V
Description détaillée:N-Channel 500V 400mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
Courant - Drainage continu (Id) à 25 ° C:400mA (Ta)
Email:[email protected]

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