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Accueil > Centre des produits > Produits semi-conducteurs discrets > Transistors - FET, MOSFET - tableaux > APTM100A12STG
APTM100A12STG
Modèle de produit:
APTM100A12STG
Fabricant:
Microsemi
La description:
MOSFET 2N-CH 1000V 68A LP8W
Statut RoHS:
Sans plomb / conforme à la directive RoHS
la quantité en dépôt:
65769 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
APTM100A12STG.pdf
Enquête

introduction

We can supply APTM100A12STG, use the request quote form to request APTM100A12STG pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APTM100A12STG.The price and lead time for APTM100A12STG depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APTM100A12STG.We look forward to working with you to establish long-term relations of cooperation

Spécifications

Numéro de pièce interne RO-APTM100A12STG
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Vgs (th) (Max) @ Id:5V @ 10mA
Package composant fournisseur:SP3
Séries:-
Rds On (Max) @ Id, Vgs:120 mOhm @ 34A, 10V
Puissance - Max:1250W
Emballage:Bulk
Package / Boîte:SP3
Température de fonctionnement:-40°C ~ 150°C (TJ)
Type de montage:Chassis Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:17400pF @ 25V
Charge de la porte (Qg) (Max) @ Vgs:616nC @ 10V
type de FET:2 N-Channel (Half Bridge)
Fonction FET:Standard
Tension drain-source (Vdss):1000V (1kV)
Description détaillée:Mosfet Array 2 N-Channel (Half Bridge) 1000V (1kV) 68A 1250W Chassis Mount SP3
Courant - Drainage continu (Id) à 25 ° C:68A
Email:[email protected]

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