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Accueil > Centre des produits > Produits semi-conducteurs discrets > Transistors - FET, MOSFET - RF > 2731GN-110M
2731GN-110M
Modèle de produit:
2731GN-110M
Fabricant:
Microsemi
La description:
FETS RF GAN 150V 2.7-3.1GHZ 55QP
Statut RoHS:
Sans plomb / conforme à la directive RoHS
la quantité en dépôt:
48408 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
2731GN-110M.pdf
Enquête

introduction

We can supply 2731GN-110M, use the request quote form to request 2731GN-110M pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number 2731GN-110M.The price and lead time for 2731GN-110M depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# 2731GN-110M.We look forward to working with you to establish long-term relations of cooperation

Spécifications

Numéro de pièce interne RO-2731GN-110M
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Tension - Nominale:150V
Tension - Sortie:125W
Tension - Ventilation:55QP
Séries:-
État RoHS:Bulk
Polarisation:55QP
Noise Figure:60V
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Référence fabricant:2731GN-110M
La fréquence:2.7GHz ~ 3.1GHz
type de FET:11.7dB ~ 12.2dB
Description élargie:RF Mosfet 2 N-Channel (Dual) Common Source 60V 250mA 2.7GHz ~ 3.1GHz 11.7dB ~ 12.2dB 125W 55QP
Tension d'entraînement (Max Rds activé, Min Rds activé):250mA
La description:FETS RF GAN 150V 2.7-3.1GHZ 55QP
Note actuelle:2.5mA
Courant - Test:-
Courant - Collecteur (Ic) (max):2 N-Channel (Dual) Common Source
Email:[email protected]

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