TSM80N950CP ROG
TSM80N950CP ROG
Artikelnummer:
TSM80N950CP ROG
Hersteller:
TSC (Taiwan Semiconductor)
Beschreibung:
MOSFET N-CHANNEL 800V 6A TO252
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
76708 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
TSM80N950CP ROG.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-TSM80N950CP ROG
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-252, (D-Pak)
Serie:-
Rds On (Max) @ Id, Vgs:950 mOhm @ 3A, 10V
Verlustleistung (max):110W (Tc)
Verpackung:Original-Reel®
Verpackung / Gehäuse:TO-252-3, DPak (2 Leads + Tab), SC-63
Andere Namen:TSM80N950CP ROGDKR
TSM80N950CP ROGDKR-ND
TSM80N950CPROGDKR
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):3 (168 Hours)
Hersteller Standard Vorlaufzeit:30 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:691pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:19.6nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):800V
detaillierte Beschreibung:N-Channel 800V 6A (Tc) 110W (Tc) Surface Mount TO-252, (D-Pak)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:6A (Tc)
Email:[email protected]

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