Interne Teilenummer | RO-SQJ952EP-T1_GE3 |
---|---|
Bedingung | Original New |
Herkunftsland | Contact us |
Top-Markierung | email us |
Ersatz | See datasheet |
VGS (th) (Max) @ Id: | 2.5V @ 250µA |
Supplier Device-Gehäuse: | PowerPAK® SO-8 Dual |
Serie: | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 10.3A, 10V |
Leistung - max: | 25W (Tc) |
Verpackung: | Tape & Reel (TR) |
Verpackung / Gehäuse: | 8-PowerTDFN |
Andere Namen: | SQJ952EP-T1-GE3 SQJ952EP-T1_GE3-ND SQJ952EP-T1_GE3TR |
Betriebstemperatur: | -55°C ~ 175°C (TJ) |
Befestigungsart: | Surface Mount |
Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
Eingabekapazität (Ciss) (Max) @ Vds: | 1800pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Typ FET: | 2 N-Channel (Dual) |
FET-Merkmal: | Standard |
Drain-Source-Spannung (Vdss): | 60V |
detaillierte Beschreibung: | Mosfet Array 2 N-Channel (Dual) 60V 23A (Tc) 25W (Tc) Surface Mount PowerPAK® SO-8 Dual |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C: | 23A (Tc) |
Email: | [email protected] |