SI4567DY-T1-GE3
Artikelnummer:
SI4567DY-T1-GE3
Hersteller:
Electro-Films (EFI) / Vishay
Beschreibung:
MOSFET N/P-CH 40V 5A 8-SOIC
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
43898 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
SI4567DY-T1-GE3.pdf

Einführung

We can supply SI4567DY-T1-GE3, use the request quote form to request SI4567DY-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI4567DY-T1-GE3.The price and lead time for SI4567DY-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI4567DY-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-SI4567DY-T1-GE3
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:2.2V @ 250µA
Supplier Device-Gehäuse:8-SO
Serie:TrenchFET®
Rds On (Max) @ Id, Vgs:60 mOhm @ 4.1A, 10V
Leistung - max:2.75W, 2.95W
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-SOIC (0.154", 3.90mm Width)
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:355pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V
Typ FET:N and P-Channel
FET-Merkmal:Standard
Drain-Source-Spannung (Vdss):40V
detaillierte Beschreibung:Mosfet Array N and P-Channel 40V 5A, 4.4A 2.75W, 2.95W Surface Mount 8-SO
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:5A, 4.4A
Basisteilenummer:SI4567
Email:[email protected]

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