RTE002P02TL
RTE002P02TL
Artikelnummer:
RTE002P02TL
Hersteller:
LAPIS Semiconductor
Beschreibung:
MOSFET P-CH 20V 0.2A SOT416
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
37788 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
RTE002P02TL.pdf

Einführung

We can supply RTE002P02TL, use the request quote form to request RTE002P02TL pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RTE002P02TL.The price and lead time for RTE002P02TL depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RTE002P02TL.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-RTE002P02TL
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:2V @ 1mA
Vgs (Max):±12V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:EMT3
Serie:-
Rds On (Max) @ Id, Vgs:1.5 Ohm @ 200mA, 4.5V
Verlustleistung (max):150mW (Ta)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:SC-75, SOT-416
Andere Namen:RTE002P02TLTR
Betriebstemperatur:150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:50pF @ 10V
Typ FET:P-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):2.5V, 4.5V
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:P-Channel 20V 200mA (Ta) 150mW (Ta) Surface Mount EMT3
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:200mA (Ta)
Email:[email protected]

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