NE3515S02-T1C-A
NE3515S02-T1C-A
Artikelnummer:
NE3515S02-T1C-A
Hersteller:
CEL (California Eastern Laboratories)
Beschreibung:
FET RF HFET 12GHZ 2V 10MA S02
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
40689 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
1.NE3515S02-T1C-A.pdf2.NE3515S02-T1C-A.pdf

Einführung

We can supply NE3515S02-T1C-A, use the request quote form to request NE3515S02-T1C-A pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number NE3515S02-T1C-A.The price and lead time for NE3515S02-T1C-A depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# NE3515S02-T1C-A.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-NE3515S02-T1C-A
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Prüfung:2V
Spannung - Nennwert:4V
Transistor-Typ:HFET
Supplier Device-Gehäuse:S02
Serie:-
Leistung:14dBm
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:4-SMD, Flat Leads
Andere Namen:NE3515S02-T1C-A-ND
NE3515S02-T1C-ATR
NE3515S02T1CA
Rauschmaß:0.3dB
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Gewinnen:12.5dB
Frequenz:12GHz
detaillierte Beschreibung:RF Mosfet HFET 2V 10mA 12GHz 12.5dB 14dBm S02
Aktuelle Bewertung:88mA
Strom - Test:10mA
Basisteilenummer:NE3515
Email:[email protected]

Schnell Angebot anfordern

Artikelnummer
Anzahl
Unternehmen
Email
Telefon
Bemerkung/Erläuterung