IXFX20N80Q
Artikelnummer:
IXFX20N80Q
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH 800V 20A PLUS247-3
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
37353 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
IXFX20N80Q.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-IXFX20N80Q
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:4.5V @ 4mA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:PLUS247™-3
Serie:HiPerFET™
Rds On (Max) @ Id, Vgs:420 mOhm @ 10A, 10V
Verlustleistung (max):360W (Tc)
Verpackung / Gehäuse:TO-247-3
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:5100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:200nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):800V
detaillierte Beschreibung:N-Channel 800V 20A (Tc) 360W (Tc) Through Hole PLUS247™-3
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:20A (Tc)
Email:[email protected]

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