IXFX200N10P
IXFX200N10P
Artikelnummer:
IXFX200N10P
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH 100V 200A PLUS247
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
89027 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
IXFX200N10P.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-IXFX200N10P
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:5V @ 8mA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:PLUS247™-3
Serie:HiPerFET™, PolarP2™
Rds On (Max) @ Id, Vgs:7.5 mOhm @ 100A, 10V
Verlustleistung (max):830W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-247-3
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:24 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:7600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:235nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):100V
detaillierte Beschreibung:N-Channel 100V 200A (Tc) 830W (Tc) Through Hole PLUS247™-3
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:200A (Tc)
Email:[email protected]

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