IXFX20N120
IXFX20N120
Artikelnummer:
IXFX20N120
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH 1200V 20A ISOPLUS247
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
60679 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
IXFX20N120.pdf

Einführung

We can supply IXFX20N120, use the request quote form to request IXFX20N120 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXFX20N120.The price and lead time for IXFX20N120 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXFX20N120.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-IXFX20N120
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:4.5V @ 8mA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:PLUS247™-3
Serie:HiPerFET™
Rds On (Max) @ Id, Vgs:750 mOhm @ 500mA, 10V
Verlustleistung (max):780W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-247-3
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:7400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:160nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):1200V
detaillierte Beschreibung:N-Channel 1200V 20A (Tc) 780W (Tc) Through Hole PLUS247™-3
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:20A (Tc)
Email:[email protected]

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