CTLDM8120-M832DS TR
Artikelnummer:
CTLDM8120-M832DS TR
Hersteller:
Central Semiconductor
Beschreibung:
MOSFET DUAL N-CHANNEL
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
58784 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
CTLDM8120-M832DS TR.pdf

Einführung

We can supply CTLDM8120-M832DS TR, use the request quote form to request CTLDM8120-M832DS TR pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number CTLDM8120-M832DS TR.The price and lead time for CTLDM8120-M832DS TR depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# CTLDM8120-M832DS TR.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-CTLDM8120-M832DS TR
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:1V @ 250µA
Supplier Device-Gehäuse:TLM832DS
Serie:-
Rds On (Max) @ Id, Vgs:150 mOhm @ 950mA, 4.5V
Leistung - max:1.65W
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-TDFN Exposed Pad
Andere Namen:CTLDM8120-M832DS TR-ND
CTLDM8120-M832DSTR
Betriebstemperatur:-65°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:200pF @ 16V
Gate Charge (Qg) (Max) @ Vgs:3.56nC @ 4.5V
Typ FET:2 P-Channel (Dual)
FET-Merkmal:Standard
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:Mosfet Array 2 P-Channel (Dual) 20V 860mA (Ta) 1.65W Surface Mount TLM832DS
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:860mA (Ta)
Email:[email protected]

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