CSD88539NDT
Artikelnummer:
CSD88539NDT
Hersteller:
TI
Beschreibung:
MOSFET 2N-CH 60V 15A 8SOIC
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
75307 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
CSD88539NDT.pdf

Einführung

We can supply CSD88539NDT, use the request quote form to request CSD88539NDT pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number CSD88539NDT.The price and lead time for CSD88539NDT depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# CSD88539NDT.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-CSD88539NDT
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:3.6V @ 250µA
Supplier Device-Gehäuse:8-SO
Serie:NexFET™
Rds On (Max) @ Id, Vgs:28 mOhm @ 5A, 10V
Leistung - max:2.1W
Verpackung:Original-Reel®
Verpackung / Gehäuse:8-SOIC (0.154", 3.90mm Width)
Andere Namen:296-37796-6
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:35 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:741pF @ 30V
Gate Charge (Qg) (Max) @ Vgs:9.4nC @ 10V
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):60V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 60V 15A 2.1W Surface Mount 8-SO
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:15A
Basisteilenummer:CSD88539
Email:[email protected]

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