ALD1110ESAL
Artikelnummer:
ALD1110ESAL
Hersteller:
Advanced Linear Devices, Inc.
Beschreibung:
MOSFET 2N-CH 10V 8SOIC
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
85550 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
ALD1110ESAL.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-ALD1110ESAL
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:1.01V @ 1µA
Supplier Device-Gehäuse:8-SOIC
Serie:EPAD®
Rds On (Max) @ Id, Vgs:500 Ohm @ 5V
Leistung - max:600mW
Verpackung:Tube
Verpackung / Gehäuse:8-SOIC (0.154", 3.90mm Width)
Betriebstemperatur:0°C ~ 70°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:8 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:2.5pF @ 5V
Gate Charge (Qg) (Max) @ Vgs:-
Typ FET:2 N-Channel (Dual) Matched Pair
FET-Merkmal:Standard
Drain-Source-Spannung (Vdss):10V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) Matched Pair 10V 600mW Surface Mount 8-SOIC
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:-
Email:[email protected]

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