2SC3356-T1B-R24-A
Artikelnummer:
2SC3356-T1B-R24-A
Hersteller:
CEL (California Eastern Laboratories)
Beschreibung:
SAME AS NE85633 NPN SILICON AMPL
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
63737 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
2SC3356-T1B-R24-A.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-2SC3356-T1B-R24-A
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):12V
Transistor-Typ:NPN
Supplier Device-Gehäuse:SOT-23
Serie:-
Leistung - max:200mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:TO-236-3, SC-59, SOT-23-3
Betriebstemperatur:150°C (TJ)
Rauschzahl (dB Typ @ f):1.1dB @ 1GHz
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Gewinnen:11.5dB
Frequenz - Übergang:7GHz
detaillierte Beschreibung:RF Transistor NPN 12V 100mA 7GHz 200mW Surface Mount SOT-23
DC Stromgewinn (HFE) (Min) @ Ic, VCE:50 @ 20mA, 10V
Strom - Kollektor (Ic) (max):100mA
Email:[email protected]

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