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SQJ431EP-T1_GE3
- Part Number:
- SQJ431EP-T1_GE3
- Manufacturer:
- Vishay / Siliconix
- Description:
- MOSFET P-CHAN 200V SO8L
- RoHS Status:
- Lead free / RoHS Compliant
- Quantity in Stock:
- 60348 Pieces
- Delivery Time:
- 1-2 days (We have stocks to ship now)
- Production time:
- 4-8 weeks
- Data sheet:
- SQJ431EP-T1_GE3.pdf
Introduction
Specifications
| Internal Part Number | RO-SQJ431EP-T1_GE3 |
|---|---|
| Condition | Original New |
| Country Origin | Contact us |
| Top Marking | email us |
| Replacement | See datasheet |
| Voltage - Test: | 4355pF @ 25V |
| Voltage - Breakdown: | PowerPAK® SO-8 |
| Vgs(th) (Max) @ Id: | 213 mOhm @ 1A, 4V |
| Vgs (Max): | 6V, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Series: | Automotive, AEC-Q101, TrenchFET® |
| RoHS Status: | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs: | 12A (Tc) |
| Polarization: | PowerPAK® SO-8 |
| Other Names: | SQJ431EP-T1_GE3TR |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 18 Weeks |
| Manufacturer Part Number: | SQJ431EP-T1_GE3 |
| Input Capacitance (Ciss) (Max) @ Vds: | 160nC @ 10V |
| IGBT Type: | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 3.5V @ 250µA |
| FET Feature: | P-Channel |
| Expanded Description: | P-Channel 200V 12A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8 |
| Drain to Source Voltage (Vdss): | - |
| Description: | MOSFET P-CHAN 200V SO8L |
| Current - Continuous Drain (Id) @ 25°C: | 200V |
| Capacitance Ratio: | 83W (Tc) |
| Email: | [email protected] |
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