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SIHB12N65E-GE3
- Part Number:
- SIHB12N65E-GE3
- Manufacturer:
- Vishay / Siliconix
- Description:
- MOSFET N-CH 650V 12A D2PAK
- RoHS Status:
- Lead free / RoHS Compliant
- Quantity in Stock:
- 57274 Pieces
- Delivery Time:
- 1-2 days (We have stocks to ship now)
- Production time:
- 4-8 weeks
- Data sheet:
- SIHB12N65E-GE3.pdf
Introduction
Specifications
| Internal Part Number | RO-SIHB12N65E-GE3 |
|---|---|
| Condition | Original New |
| Country Origin | Contact us |
| Top Marking | email us |
| Replacement | See datasheet |
| Voltage - Test: | 1224pF @ 100V |
| Voltage - Breakdown: | D²PAK (TO-263) |
| Vgs(th) (Max) @ Id: | 380 mOhm @ 6A, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Series: | - |
| RoHS Status: | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs: | 12A (Tc) |
| Polarization: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 19 Weeks |
| Manufacturer Part Number: | SIHB12N65E-GE3 |
| Input Capacitance (Ciss) (Max) @ Vds: | 70nC @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 4V @ 250µA |
| FET Feature: | N-Channel |
| Expanded Description: | N-Channel 650V 12A (Tc) 156W (Tc) Surface Mount D²PAK (TO-263) |
| Drain to Source Voltage (Vdss): | - |
| Description: | MOSFET N-CH 650V 12A D2PAK |
| Current - Continuous Drain (Id) @ 25°C: | 650V |
| Capacitance Ratio: | 156W (Tc) |
| Email: | [email protected] |
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