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SI6423DQ-T1-GE3
- Part Number:
- SI6423DQ-T1-GE3
- Manufacturer:
- Vishay / Siliconix
- Description:
- MOSFET P-CH 12V 8.2A 8-TSSOP
- RoHS Status:
- Lead free / RoHS Compliant
- Quantity in Stock:
- 58145 Pieces
- Delivery Time:
- 1-2 days (We have stocks to ship now)
- Production time:
- 4-8 weeks
- Data sheet:
- SI6423DQ-T1-GE3.pdf
Introduction
Specifications
| Internal Part Number | RO-SI6423DQ-T1-GE3 |
|---|---|
| Condition | Original New |
| Country Origin | Contact us |
| Top Marking | email us |
| Replacement | See datasheet |
| Voltage - Test: | - |
| Voltage - Breakdown: | 8-TSSOP |
| Vgs(th) (Max) @ Id: | 8.5 mOhm @ 9.5A, 4.5V |
| Vgs (Max): | 1.8V, 4.5V |
| Technology: | MOSFET (Metal Oxide) |
| Series: | TrenchFET® |
| RoHS Status: | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs: | 8.2A (Ta) |
| Polarization: | 8-TSSOP (0.173", 4.40mm Width) |
| Other Names: | SI6423DQ-T1-GE3TR SI6423DQT1GE3 |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 15 Weeks |
| Manufacturer Part Number: | SI6423DQ-T1-GE3 |
| Input Capacitance (Ciss) (Max) @ Vds: | 110nC @ 5V |
| IGBT Type: | ±8V |
| Gate Charge (Qg) (Max) @ Vgs: | 800mV @ 400µA |
| FET Feature: | P-Channel |
| Expanded Description: | P-Channel 12V 8.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP |
| Drain to Source Voltage (Vdss): | - |
| Description: | MOSFET P-CH 12V 8.2A 8-TSSOP |
| Current - Continuous Drain (Id) @ 25°C: | 12V |
| Capacitance Ratio: | 1.05W (Ta) |
| Email: | [email protected] |
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