TSM061NA03CV RGG
TSM061NA03CV RGG
型號:
TSM061NA03CV RGG
製造商:
TSC (Taiwan Semiconductor)
描述:
MOSFET N-CH 30V 66A 8PDFN
RoHS狀態:
無鉛/符合RoHS
庫存數量:
71522 Pieces
發貨時間:
1-2 days (We have stocks to ship now)
生產時間:
4-8 weeks
數據表:
TSM061NA03CV RGG.pdf

簡單介紹

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產品特性

內部型號 RO-TSM061NA03CV RGG
狀況 Original New
原產地 Contact us
頂部標記 email us
替代 See datasheet
VGS(TH)(最大)@標識:2.5V @ 250µA
Vgs(最大):±20V
技術:MOSFET (Metal Oxide)
供應商設備封裝:8-PDFN (3x3)
系列:-
RDS(ON)(最大值)@標識,柵極電壓:6.1 mOhm @ 16A, 10V
功率耗散(最大):44.6W (Tc)
封装:Cut Tape (CT)
封裝/箱體:8-PowerWDFN
其他名稱:TSM061NA03CV RGGCT
TSM061NA03CV RGGCT-ND
TSM061NA03CVRGGCT
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
製造商標準交貨期:30 Weeks
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:1136pF @ 15V
柵極電荷(Qg)(Max)@ Vgs:19.3nC @ 10V
FET型:N-Channel
FET特點:-
驅動電壓(最大Rds開,最小Rds開):4.5V, 10V
漏極至源極電壓(Vdss):30V
詳細說明:N-Channel 30V 66A (Tc) 44.6W (Tc) Surface Mount 8-PDFN (3x3)
電流 - 25°C連續排水(Id):66A (Tc)
Email:[email protected]

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