TK18E10K3,S1X(S
型號:
TK18E10K3,S1X(S
製造商:
Toshiba Semiconductor and Storage
描述:
MOSFET N-CH 100V 18A TO-220AB
RoHS狀態:
無鉛/符合RoHS
庫存數量:
82868 Pieces
發貨時間:
1-2 days (We have stocks to ship now)
生產時間:
4-8 weeks
數據表:
TK18E10K3,S1X(S.pdf

簡單介紹

We can supply TK18E10K3,S1X(S, use the request quote form to request TK18E10K3,S1X(S pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TK18E10K3,S1X(S.The price and lead time for TK18E10K3,S1X(S depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TK18E10K3,S1X(S.We look forward to working with you to establish long-term relations of cooperation

產品特性

內部型號 RO-TK18E10K3,S1X(S
狀況 Original New
原產地 Contact us
頂部標記 email us
替代 See datasheet
VGS(TH)(最大)@標識:-
技術:MOSFET (Metal Oxide)
供應商設備封裝:TO-220-3
系列:U-MOSIV
RDS(ON)(最大值)@標識,柵極電壓:42 mOhm @ 9A, 10V
功率耗散(最大):-
封装:Tube
封裝/箱體:TO-220-3
其他名稱:TK18E10K3S1X(S
TK18E10K3S1XS
工作溫度:150°C (TJ)
安裝類型:Through Hole
濕度敏感度等級(MSL):1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
柵極電荷(Qg)(Max)@ Vgs:33nC @ 10V
FET型:N-Channel
FET特點:-
漏極至源極電壓(Vdss):100V
詳細說明:N-Channel 100V 18A (Ta) Through Hole TO-220-3
電流 - 25°C連續排水(Id):18A (Ta)
Email:[email protected]

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