SIZ700DT-T1-GE3
SIZ700DT-T1-GE3
型號:
SIZ700DT-T1-GE3
製造商:
Electro-Films (EFI) / Vishay
描述:
MOSFET 2N-CH 20V 16A PPAK 1212-8
RoHS狀態:
無鉛/符合RoHS
庫存數量:
57973 Pieces
發貨時間:
1-2 days (We have stocks to ship now)
生產時間:
4-8 weeks
數據表:
SIZ700DT-T1-GE3.pdf

簡單介紹

We can supply SIZ700DT-T1-GE3, use the request quote form to request SIZ700DT-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIZ700DT-T1-GE3.The price and lead time for SIZ700DT-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIZ700DT-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

產品特性

內部型號 RO-SIZ700DT-T1-GE3
狀況 Original New
原產地 Contact us
頂部標記 email us
替代 See datasheet
VGS(TH)(最大)@標識:2.2V @ 250µA
供應商設備封裝:6-PowerPair™
系列:TrenchFET®
RDS(ON)(最大值)@標識,柵極電壓:8.6 mOhm @ 15A, 10V
功率 - 最大:2.36W, 2.8W
封装:Tape & Reel (TR)
封裝/箱體:6-PowerPair™
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:1300pF @ 10V
柵極電荷(Qg)(Max)@ Vgs:35nC @ 10V
FET型:2 N-Channel (Half Bridge)
FET特點:Standard
漏極至源極電壓(Vdss):20V
詳細說明:Mosfet Array 2 N-Channel (Half Bridge) 20V 16A 2.36W, 2.8W Surface Mount 6-PowerPair™
電流 - 25°C連續排水(Id):16A
Email:[email protected]

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