SIZ200DT-T1-GE3
- 型號:
- SIZ200DT-T1-GE3
- 描述:
- MOSFET N-CH DUAL 30V
- RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 66820 Pieces
- 發貨時間:
- 1-2 days (We have stocks to ship now)
- 生產時間:
- 4-8 weeks
簡單介紹
We can supply SIZ200DT-T1-GE3, use the request quote form to request SIZ200DT-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIZ200DT-T1-GE3.The price and lead time for SIZ200DT-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIZ200DT-T1-GE3.We look forward to working with you to establish long-term relations of cooperation
產品特性
| 內部型號 | RO-SIZ200DT-T1-GE3 |
|---|---|
| 狀況 | Original New |
| 原產地 | Contact us |
| 頂部標記 | email us |
| 替代 | See datasheet |
| VGS（TH）（最大）@標識: | 2.4V @ 250µA |
| 供應商設備封裝: | 8-PowerPair® (3.3x3.3) |
| 系列: | TrenchFET® Gen IV |
| RDS（ON）（最大值）@標識，柵極電壓: | 5.5 mOhm @ 10A, 10V, 5.8 mOhm @ 10A, 10V |
| 功率 - 最大: | 4.3W (Ta), 33W (Tc) |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | 8-PowerWDFN |
| 其他名稱: | SIZ200DT-T1-GE3TR |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度等級（MSL）: | 1 (Unlimited) |
| 無鉛狀態/ RoHS狀態: | Lead free / RoHS Compliant |
| 輸入電容（Ciss）（Max）@ Vds: | 1510pF @ 15V, 1600pF @ 15V |
| 柵極電荷（Qg）（Max）@ Vgs: | 28nC @ 10V, 30nC @ 10V |
| FET型: | 2 N-Channel (Dual) |
| FET特點: | Standard |
| 漏極至源極電壓（Vdss）: | 30V |
| 詳細說明: | Mosfet Array 2 N-Channel (Dual) 30V 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc) 4.3W (Ta), 33W (Tc) Surface Mount 8-PowerPair® (3.3x3.3) |
| 電流 - 25°C連續排水（Id）: | 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc) |
| Email: | [email protected] |
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