GA10SICP12-263
GA10SICP12-263
型號:
GA10SICP12-263
製造商:
GeneSiC Semiconductor
描述:
TRANS SJT 1200V 25A TO263-7
RoHS狀態:
無鉛/符合RoHS
庫存數量:
74863 Pieces
發貨時間:
1-2 days (We have stocks to ship now)
生產時間:
4-8 weeks
數據表:
GA10SICP12-263.pdf

簡單介紹

We can supply GA10SICP12-263, use the request quote form to request GA10SICP12-263 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number GA10SICP12-263.The price and lead time for GA10SICP12-263 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# GA10SICP12-263.We look forward to working with you to establish long-term relations of cooperation

產品特性

內部型號 RO-GA10SICP12-263
狀況 Original New
原產地 Contact us
頂部標記 email us
替代 See datasheet
VGS(TH)(最大)@標識:-
Vgs(最大):-
技術:SiC (Silicon Carbide Junction Transistor)
供應商設備封裝:D2PAK (7-Lead)
系列:-
RDS(ON)(最大值)@標識,柵極電壓:100 mOhm @ 10A
功率耗散(最大):170W (Tc)
封装:Tube
封裝/箱體:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
其他名稱:1242-1318
GA10SICP12-263-ND
工作溫度:175°C (TJ)
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
製造商標準交貨期:18 Weeks
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:1403pF @ 800V
FET型:-
FET特點:-
驅動電壓(最大Rds開,最小Rds開):-
漏極至源極電壓(Vdss):1200V
詳細說明:1200V 25A (Tc) 170W (Tc) Surface Mount D2PAK (7-Lead)
電流 - 25°C連續排水(Id):25A (Tc)
Email:[email protected]

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