FQA6N80_F109
FQA6N80_F109
型號:
FQA6N80_F109
製造商:
ON Semiconductor
描述:
MOSFET N-CH 800V 6.3A TO-3P
RoHS狀態:
無鉛/符合RoHS
庫存數量:
52930 Pieces
發貨時間:
1-2 days (We have stocks to ship now)
生產時間:
4-8 weeks
數據表:
FQA6N80_F109.pdf

簡單介紹

We can supply FQA6N80_F109, use the request quote form to request FQA6N80_F109 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FQA6N80_F109.The price and lead time for FQA6N80_F109 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FQA6N80_F109.We look forward to working with you to establish long-term relations of cooperation

產品特性

內部型號 RO-FQA6N80_F109
狀況 Original New
原產地 Contact us
頂部標記 email us
替代 See datasheet
VGS(TH)(最大)@標識:5V @ 250µA
Vgs(最大):±30V
技術:MOSFET (Metal Oxide)
供應商設備封裝:TO-3PN
系列:QFET®
RDS(ON)(最大值)@標識,柵極電壓:1.95 Ohm @ 3.15A, 10V
功率耗散(最大):185W (Tc)
封装:Tube
封裝/箱體:TO-3P-3, SC-65-3
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Through Hole
濕度敏感度等級(MSL):1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:1500pF @ 25V
柵極電荷(Qg)(Max)@ Vgs:31nC @ 10V
FET型:N-Channel
FET特點:-
驅動電壓(最大Rds開,最小Rds開):10V
漏極至源極電壓(Vdss):800V
詳細說明:N-Channel 800V 6.3A (Tc) 185W (Tc) Through Hole TO-3PN
電流 - 25°C連續排水(Id):6.3A (Tc)
Email:[email protected]

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