FDB3632_SB82115
FDB3632_SB82115
型號:
FDB3632_SB82115
製造商:
ON Semiconductor
描述:
INTEGRATED CIRCUIT
RoHS狀態:
無鉛/符合RoHS
庫存數量:
80515 Pieces
發貨時間:
1-2 days (We have stocks to ship now)
生產時間:
4-8 weeks
數據表:
FDB3632_SB82115.pdf

簡單介紹

We can supply FDB3632_SB82115, use the request quote form to request FDB3632_SB82115 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FDB3632_SB82115.The price and lead time for FDB3632_SB82115 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FDB3632_SB82115.We look forward to working with you to establish long-term relations of cooperation

產品特性

內部型號 RO-FDB3632_SB82115
狀況 Original New
原產地 Contact us
頂部標記 email us
替代 See datasheet
VGS(TH)(最大)@標識:4V @ 250µA
Vgs(最大):±20V
技術:MOSFET (Metal Oxide)
供應商設備封裝:D²PAK (TO-263AB)
系列:PowerTrench®
RDS(ON)(最大值)@標識,柵極電壓:9 mOhm @ 80A, 10V
功率耗散(最大):310W (Tc)
封装:Bulk
封裝/箱體:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
工作溫度:-55°C ~ 175°C (TJ)
安裝類型:Surface Mount
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:6000pF @ 25V
柵極電荷(Qg)(Max)@ Vgs:110nC @ 10V
FET型:N-Channel
FET特點:-
驅動電壓(最大Rds開,最小Rds開):6V, 10V
漏極至源極電壓(Vdss):100V
詳細說明:N-Channel 100V 12A (Ta), 80A (Tc) 310W (Tc) Surface Mount D²PAK (TO-263AB)
電流 - 25°C連續排水(Id):12A (Ta), 80A (Tc)
Email:[email protected]

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